SPB42N03S2L13T

SPB42N03S2L13T Datasheet

SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13

Part	Datasheet
SPB42N03S2L13T	SPB42N03S2L13T (pdf)

Related Parts	Information
SPP42N03S2L-13	SPP42N03S2L-13
SPB42N03S2L-13	SPB42N03S2L-13
SPI42N03S2L-13	SPI42N03S2L-13
SPB42N03S2L-13 G	SPB42N03S2L-13 G

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Power-Transistor • N-channel • Enhancement mode • Logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature P-TO262-3-1 • Avalanche rated • dv /dt rated SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 Product Summary V DS R DS on ,max ID 30 V 42 A P-TO263-3-2 P-TO220-3-1 Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Marking Q67042-S4034 2N03L13 Q67042-S4035 2N03L13 Q67042-S4104 2N03L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1 T C=25 °C T C=100 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse Repetitive avalanche energy E AS E AR I D=42 A, R GS=25 limited by T jmax 2 dv /dt I D=42 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 42 248 110 8 ±20 83 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2004-06-04 SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V BR DSS V GS=0 V, I D=1 mA Gate threshold voltage

PDF Datasheet Preview

Power-Transistor
• N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature

P-TO262-3-1
• Avalanche rated
• dv /dt rated

SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13

Product Summary V DS R DS on ,max ID
30 V 42 A

P-TO263-3-2

P-TO220-3-1

Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13

Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Marking Q67042-S4034 2N03L13 Q67042-S4035 2N03L13 Q67042-S4104 2N03L13

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current1

T C=25 °C

T C=100 °C

Pulsed drain current

I D,pulse T C=25 °C

Avalanche energy, single pulse Repetitive avalanche energy

E AS E AR

I D=42 A, R GS=25 limited by T jmax 2
dv /dt

I D=42 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 42 248 110 8
±20 83 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2004-06-04

SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13

Parameter

Symbol Conditions
min.

Values typ.

Unit max.

Thermal characteristics

Thermal resistance, junction - case R thJC

SMD version, device on PCB

R thJA minimal footprint
6 cm2 cooling area3

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V BR DSS V GS=0 V, I D=1 mA

Gate threshold voltage

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Datasheet ID: SPB42N03S2L13T 638646