IRLM110ATF
IRLM110ATF Datasheet
IRLM110A
| Part | Datasheet |
|---|---|
IRLM110ATF |
IRLM110ATF (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA Max. VDS = 100V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ, TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=70oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds IRLM110A BVDSS = 100 V RDS on = ID = A SOT-223 Gate Drain Source Value 100 12 ±20 60 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Typ. Junction-to-Ambient * * When mounted on the minimum pad size recommended PCB Mount . Max. Units oC/W IRLM110A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25 oC unless otherwise specified Symbol BVDSS VGS th IGSS |
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