SPN02N60S5
SPN02N60S5 Datasheet
SPN02N60S5
| Part | Datasheet |
|---|---|
SPN02N60S5 |
SPN02N60S5 (pdf) |
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| Cool MOS Power Transistor SPN02N60S5 VDS RDS on 600 V SOT-223 VPS05163 Type SPN02N60S5 Package SOT-223 Ordering Code Q67040-S4207 Marking 02N60S5 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC f >1Hz Power dissipation, TA = 25°C Operating and storage temperature Symbol ID ID puls VGS Ptot Tj , Tstg Value Unit ±20 ±30 +150 2005-02-21 SPN02N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - soldering point SMD version, device on PCB min. footprint 6 cm2 cooling area 1 Soldering temperature, mm in. from case for 10s Symbol RthJS RthJA Tsold Values Unit min. typ. max. - K/W - 110 -- - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V BR DSS VGS=0V, ID=0.25mA 600 Drain-Source avalanche breakdown voltage V BR DS VGS=0V, ID=1.8A - 700 - |
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