BSP300
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BSP300L6327HUSA1 (pdf) |
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BSP300 E6327 |
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BSP300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = V • Pb-free lead plating RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP300 Type BSP300 VDS 800 V RoHS compliant Yes RDS on Package PG-SOT223 Marking BSP300 Tape and Reel Information Packaging L6327 Maximum Ratings Parameter Continuous drain current TA = 25 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = 105 mH, Tj = 25 °C Gate source voltage Power dissipation TA = 25 °C ESD Class JESD22-A114-HBM Symbol ID IDpuls EAS VGS Ptot Values Unit ± 20 Class 1a 2008-03-26 BSP300 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1 Thermal resistance, junction-soldering point 1 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS 1 Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Values Unit -55 + 150 °C -55 + 150 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Values Unit min. |
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