HUF75939P3
HUF75939P3 Datasheet
HUF75939P3, HUF75939S3ST
| Part | Datasheet |
|---|---|
HUF75939P3 |
HUF75939P3 (pdf) |
| PDF Datasheet Preview |
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| Data Sheet HUF75939P3, HUF75939S3ST December 2001 22A, 200V, Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN FLANGE HUF75939P3 HUF75939S3ST • Ultra Low On-Resistance • rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUF75939P3 TO-220AB 75939P HUF75939S3ST TO-263AB 75939S NOTE When ordering, use the entire part number. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75939P3, HUF75939S3ST UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous TC = 25oC, VGS = 10V Figure 2 ID Continuous TC = 100oC, VGS = 10V Figure 2 ID Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Tech Brief TB334 Tpkg NOTE TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2001 Fairchild Semiconductor Corporation HUF75939P3, HUF75939S3ST Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 190V, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 22A, VGS = 10V Figure 9 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220 and TO-263 SWITCHING SPECIFICATIONS VGS = 10V |
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