SKB04N60ATMA1

SKB04N60ATMA1 Datasheet

SKB04N60

Part	Datasheet
SKB04N60ATMA1	SKB04N60ATMA1 (pdf)

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SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel Emitter Controlled Diode • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : PG-TO-263-3-2 Type SKB04N60 VCE sat Marking Package 600V 4A 2.3V 150C K04N60 PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature reflow soldering, MSL1 Symbol VCE IC ICpuls IF IFpuls VGE tSC Ptot Tj , Tstg Ts Value 600 10 4 19 20 10 Unit V A V W C °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. SKB04N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case SMD version, device on PCB1 Symbol Conditions RthJC RthJCD RthJA Max. Value Unit Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Conditions Static Characteristic Collector-emitter breakdown voltage V B R C E S VG E = 0 V , I C = 5 0 Collector-emitter saturation voltage VC E s a t VG E = 1 5 V , I C = 4 A Tj=25C

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SKB04N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled

Diode
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10
• Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
• NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Very soft, fast recovery anti-parallel Emitter Controlled Diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant
• Complete product spectrum and PSpice Models :

PG-TO-263-3-2

Type SKB04N60

VCE sat

Marking Package
600V 4A
2.3V
150C K04N60 PG-TO-263-3-2

Maximum Ratings Parameter

Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature reflow soldering, MSL1

Symbol VCE IC

ICpuls IF

IFpuls VGE tSC

Ptot

Tj , Tstg Ts

Value 600
10 4 19 20 10

Unit V A

V W C °C
1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s.

SKB04N60

Thermal Resistance Parameter

Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case SMD version, device on PCB1

Symbol Conditions RthJC RthJCD RthJA

Max. Value

Unit

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Conditions

Static Characteristic

Collector-emitter breakdown voltage V B R C E S VG E = 0 V , I C = 5 0 Collector-emitter saturation voltage VC E s a t VG E = 1 5 V , I C = 4 A

Tj=25C

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Datasheet ID: SKB04N60ATMA1 638592