SIDC30D120H6X1SA4

SIDC30D120H6X1SA4 Datasheet

SIDC30D120H6

Part	Datasheet
SIDC30D120H6X1SA4	SIDC30D120H6X1SA4 (pdf)

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SIDC30D120H6 Fast switching diode chip in EMCON-Technology FEATURES • 1200V EMCON technology 120 µm chip • soft, fast switching This chip is used for: • EUPEC power modules and discrete devices • small temperature coefficient Applications: • SMPS, resonant applications, drives Chip Type SIDC30D120H6 Die Size 1200V 50A x mm2 Package Ordering Code sawn on foil C67047-A2206A001 MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 482 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder 0.65mm max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 4182S, Edition 1, SIDC30D120H6 Maximum Ratings Parameter VRRM Continuous forward current limited by Tjmax Single pulse forward current depending on wire bond configuration IF IFSM Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature I FRM Tj , Tstg Condition tP = 10 ms sinusoidal Value Unit 1200 A tbd Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value Unit min. Typ. max. Cathode -Anode breakdown Voltage VR=1200V I R= 2 m A Tj=25 °C Tj=25°C 1200 27 µA V Forward voltage drop I F= 5 0 A

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SIDC30D120H6

Fast switching diode chip in EMCON-Technology

FEATURES
• 1200V EMCON technology 120 µm chip
• soft, fast switching

This chip is used for:
• EUPEC power modules and discrete devices
• small temperature coefficient

Applications:
• SMPS, resonant applications,
drives

Chip Type SIDC30D120H6

Die Size
1200V 50A
x mm2
Package Ordering Code
sawn on foil

C67047-A2206A001

MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation

Cathode metallisation

Die bond Wire bond Reject Ink Dot Size

Recommended Storage Environment
482 pcs

Photoimide
3200 nm AlSiCu
1400 nm Ni Ag suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
0.65mm max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies AI PS DD HV3, L 4182S, Edition 1,

SIDC30D120H6

Maximum Ratings

Parameter

VRRM

Continuous forward current limited by Tjmax Single pulse forward current
depending on wire bond configuration

IF IFSM

Maximum repetitive forward current
limited by Tjmax Operating junction and storage temperature

I FRM Tj , Tstg

Condition tP = 10 ms sinusoidal

Value

Unit
1200

A tbd

Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified

Parameter

Conditions

Value Unit
min. Typ. max.

Cathode -Anode breakdown Voltage

VR=1200V I R= 2 m A

Tj=25 °C Tj=25°C
1200
27 µA V

Forward voltage drop

I F= 5 0 A

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Datasheet ID: SIDC30D120H6X1SA4 638578