IRFR3910TRL

IRFR3910TRL Datasheet

l Surface Mount IRFR3910

Part	Datasheet
IRFR3910TRL	IRFR3910TRL (pdf)

Related Parts	Information
IRFU3910	IRFU3910
IRFR3910TRR	IRFR3910TRR

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l Ultra Low On-Resistance l Surface Mount IRFR3910 l Straight Lead IRFU3910 l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU series is for throughhole mounting applications. Power dissipation levels up to watts are possible in typical surface mount applications. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient PCB mount ** Junction-to-Ambient PD - 91364B IRFR/U3910 Power MOSFET VDSS = 100V RDS on = ID = 16A D-PAK T O -252 AA I-P A K T O -25 1AA Max. 16 12 60 79 ± 20 150 -55 to + 175 300 1.6mm from case Units W/°C V mJ A mJ V/ns Typ. Max. 50 110 Units °C/W 5/11/98 IRFR/U3910 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS RDS on VGS th gfs Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS

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l Ultra Low On-Resistance
l Surface Mount IRFR3910
l Straight Lead IRFU3910
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU series is for throughhole mounting applications. Power dissipation levels up to watts are possible in typical surface mount applications.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Junction-to-Case Junction-to-Ambient PCB mount ** Junction-to-Ambient

PD - 91364B

IRFR/U3910

Power MOSFET

VDSS = 100V

RDS on =

ID = 16A

D-PAK T O -252 AA

I-P A K T O -25 1AA

Max. 16 12 60 79 ± 20 150
-55 to + 175
300 1.6mm from case

Units

W/°C

V mJ A mJ V/ns

Typ.

Max. 50 110

Units
°C/W
5/11/98

IRFR/U3910

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR DSS RDS on VGS th gfs

Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

IDSS

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Datasheet ID: IRFR3910TRL 638338