SIDC16D60SIC3
SIDC16D60SIC3 Datasheet
SIDC16D60SIC3
| Part | Datasheet |
|---|---|
SIDC16D60SIC3 |
SIDC16D60SIC3 (pdf) |
| PDF Datasheet Preview |
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| SIDC16D60SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • Worlds first 600V Schottky diode • SMPS, PFC, snubber Silicon Carbide • Switching behavior benchmark • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction • No forward recovery Chip Type SIDC16D60SIC3 VBR IF 600V 5A Die Size x mm2 Package Ordering Code sawn on foil Q67050-A4271A101 MECHANICAL PARAMETER Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment mm mm2 2457 pcs Photoimide 3200 nm Al 1400 nm Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 125µm mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, SIDC16D60SIC3 Maximum Ratings Parameter Condition VRRM VRSM Continuous forward current limited by Tjmax Single pulse forward current depending on wire bond configuration IF IFSM Maximum repetitive forward current limited by Tjmax Non repetitive peak forward current I FRM IFMAX Operating junction and storage temperature Tj , Tstg TC =25° C, tP =10 ms sinusoidal TC = 100° C, Tj= 1 5 0 ° C, D=0.1 TC =25° C, tp=10µs Value 600 5 21 50 Unit V A Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value Unit min. Typ. max. V R= 6 0 V * |
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