SIDC09D60E6YX1SA1

SIDC09D60E6YX1SA1 Datasheet

SIDC09D60E6

Part	Datasheet
SIDC09D60E6YX1SA1	SIDC09D60E6YX1SA1 (pdf)

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SIDC09D60E6 Fast switching diode chip in EMCON-Technology FEATURES: This chip is used for: • EUPEC power modules and discrete devices • small temperature coefficient Applications: • SMPS, resonant applications, drives Chip Type SIDC09D60E6 Die Size 600V 20A 3 x 3 mm2 Package Ordering Code sawn on foil Q67050-A4006A001 MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation Cathode metallisation Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3x3 9 / 1667 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder 0.65mm max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2, SIDC09D60E6 Maximum Ratings Parameter depending on wire bond configuration VRRM IF IFSM Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature I FRM Tj , Tstg Condition tP = 10 ms sinusoidal Tj = 25°C Value Unit 60 °C Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value min. Typ. max. VR=600V Tj=25 °C Cathode -Anode breakdown Voltage I R= 3 m A Tj=25°C Forward voltage drop I F= 2 0 A Tj=25 °C Unit µA V

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SIDC09D60E6

Fast switching diode chip in EMCON-Technology

FEATURES:

This chip is used for:
• EUPEC power modules and discrete devices
• small temperature coefficient

Applications:
• SMPS, resonant applications,
drives

Chip Type SIDC09D60E6

Die Size
600V 20A
3 x 3 mm2
Package Ordering Code
sawn on foil

Q67050-A4006A001

MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallisation

Cathode metallisation

Die bond Wire bond Reject Ink Dot Size

Recommended Storage Environment
3x3 9 /
1667 pcs

Photoimide
3200 nm AlSiCu
1400 nm Ni Ag suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
0.65mm max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2,

SIDC09D60E6

Maximum Ratings

Parameter
depending on wire bond configuration

VRRM IF IFSM

Maximum repetitive forward current
limited by Tjmax Operating junction and storage temperature

I FRM Tj , Tstg

Condition
tP = 10 ms sinusoidal Tj = 25°C

Value

Unit
60 °C

Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified

Parameter

Conditions

Value min. Typ. max.

VR=600V

Tj=25 °C

Cathode -Anode breakdown Voltage

I R= 3 m A

Tj=25°C

Forward voltage drop

I F= 2 0 A

Tj=25 °C

Unit µA V

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Datasheet ID: SIDC09D60E6YX1SA1 638567