SIDC06D60AC6X1SA1

SIDC06D60AC6X1SA1 Datasheet


SIDC06D60AC6

Part Datasheet
SIDC06D60AC6X1SA1 SIDC06D60AC6X1SA1 SIDC06D60AC6X1SA1 (pdf)
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SIDC06D60AC6

Fast switching diode chip in EMCON 3 -Technology

FEATURES:

This chip is used for
• power module
• discrete components
• small temperature coefficient

Applications:
• drives
• white goods
• resonant applications

Chip Type SIDC06D60AC6
600V 20A

Die Size x 2 mm2

Package sawn on foil

MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization

Cathode metallization

Die bond Wire bond Reject ink dot size

Recommended storage environment
2574 pcs

Photoimide
3200 nm AlSiCu

Ni Ag suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
0.65mm max 1.2mm
store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition

SIDC06D60AC6

Maximum Ratings

Parameter

VRRM

Continuous forward current limited by IF

Tjmax

Maximum repetitive forward current limited by Tjmax

IFRM

Operating junction and storage temperature

Tj , Tstg
1 depending on thermal properties of assembly

Condition

Value 600

Unit V

Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified

Parameter
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Datasheet ID: SIDC06D60AC6X1SA1 638563