SDT12S60
SDT12S60 Datasheet
SDT12S60
| Part | Datasheet |
|---|---|
SDT12S60 |
SDT12S60 (pdf) |
| PDF Datasheet Preview |
|---|
| the switching behavior • No forward recovery SDT12S60 SiC Schottky Diode Product Summary VRRM 600 V 30 nC PG-TO220-2-2. Type SDT12S60 Package Ordering Code PG-TO220-2-2. Q67040-S4470 Marking Pin 1 Pin 2 D12S60 C Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz IF IFRMS Surge non repetitive forward current, sine halfwave IFSM TC=25°C, tp=10ms Repetitive peak forward current IFRM Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current IFMAX tp=10µs, TC=25°C VRRM VRSM Ptot Operating and storage temperature Tj , Tstg Value 12 17 36 600 +175 Unit A V W °C 2008-06-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SDT12S60 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=12A, Tj=25°C IF=12A, Tj=150°C VR=600V, Tj=25°C VR=600V, Tj=150°C |
| More datasheets: ICS527R-02 | ICS527R-02T | CA02L28-21SZ | DCMN21HA4SNA197 | MIKROE-2331 | MHP-TA15-9-85 | CA3101F14S-A7P | DE9SF179A-A191 | DST10100S-A | DAMAM15PNMBK52 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SDT12S60 Datasheet file may be downloaded here without warranties.