SDT10S30
SDT10S30 Datasheet
SDP10S30 SDT10S30
| Part | Datasheet |
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SDT10S30 |
SDT10S30 (pdf) |
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SDP10S30 |
SDP10S30 |
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| the switching behavior • No forward recovery SDP10S30 SDT10S30 SiC Schottky Diode Product Summary VRRM 300 V 23 nC PG-TO220-2-2. P-TO220 Type SDP10S30 SDT10S30 Package P-TO220-3 PG-TO220-2-2. Ordering Code Q67040-S4372 Q67040-S4447 Marking D10S30 Pin 1 n.c. C Pin 2 C A Pin 3 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz IF IFRMS Surge non repetitive forward current, sine halfwave IFSM TC=25°C, tp=10ms Repetitive peak forward current IFRM Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current IFMAX tp=10µs, TC=25°C VRRM VRSM Ptot Operating and storage temperature Tj , Tstg Value 10 14 36 300 65 +175 Unit A V W °C 2008-06-02 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SDP10S30 SDT10S30 Values Unit min. typ. max. RthJC Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C |
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