PTFA211801E V4
PTFA211801E V4 Datasheet
PTFA211801E PTFA211801F
| Part | Datasheet |
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PTFA211801E V4 |
PTFA211801E V4 (pdf) |
| Related Parts | Information |
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PTFA211801F V4 |
PTFA211801F V4 |
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PTFA211801E V4 R250 |
PTFA211801E V4 R250 |
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PTFA211801F V4 R250 |
PTFA211801F V4 R250 |
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| PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 2170 MHz The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA211801E Package 30260 PTFA211801F Package 31260 IM3 dBc , ACPR dBc Drain Efficiency % 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing Efficiency ACPR 34 36 38 40 42 44 46 48 Average Output Power dBm • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = dBm - Linear Gain = dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical CW performance, 2170 MHz, 30 V - Output power at = 180 W - Efficiency = 52% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 150 W CW output power RF Characteristics WCDMA Measurements tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 35 W average f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Gps ηD IMD Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTFA211801E PTFA211801F RF Characteristics cont. CW Measurements tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 150 W average, f = 2170 MHz Characteristic Gain Compression Symbol Min Typ Unit Gcomp Two-Tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 140 W PEP, f = 2140 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc DC Characteristics Ordering Information Type PTFA211801E PTFA211801F Package Outline 30260 31260 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Typical Performance data taken in a production test fixture Marking PTFA211801E PTFA211801F 3rd Order IMD dBc Gain dB , Efficiency % Input Return Loss dB Two-carrier WCDMA at Various Biases VDD = 28 V, f = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ -35 A A -50 -55 34 36 38 40 42 44 46 48 Output Power, Avg. dBm Broadband Performance VDD = 28 V, IDQ = A, POUT = dBm CW Efficiency Return Loss Gain 2070 2090 2110 2130 2150 2170 2190 2210 Frequency MHz Data Sheet 3 of 11 Typical Performance cont. Power Sweep, CW Conditions VDD = 28 V, IDQ = A, f = 2170 MHz TCASE = 25°C TCASE = 90°C 60 Efficiency Gain Gain dB 8 20 40 60 80 100 120 140 160 180 Output Power W Drain Efficiency % Gain dB PTFA211801E PTFA211801F Power Sweep, CW Conditions VDD = 30 V, IDQ = A, f = 2170 MHz 17 16 Gain 60 Efficiency 0 20 40 60 80 100 120 140 160 180 Output Power W |
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