PTFA210701EV4T500XWSA1
PTFA210701EV4T500XWSA1 Datasheet
PTFA210701E PTFA210701F
| Part | Datasheet |
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PTFA210701EV4T500XWSA1 |
PTFA210701EV4T500XWSA1 (pdf) |
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| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 2170 MHz PTFA210701E PTFA210701F The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs PTFA210701E designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with t slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal c performance and superior reliability. Package H-36265-2 PTFA210701F Package H-37265-2 IM3 dBc , ACPR dBc Drain Efficiency % du Two-carrier WCDMA Drive-up o VDD = 30 V, IDQ = 550 mA, = 2140 MHz, 3GPP WCDMA r signal, P/A R = 8 dB, 10 MHz carrier spacing p -30 d Efficiency e -40 inu -50 20 ACPR t -55 n -60 30 32 34 36 38 40 42 44 o Average Output Power dBm isc RF Characteristics d WCDMA Measurements tested in Infineon test fixture • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 42 dBm - Linear Gain = dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical CW performance, 2170 MHz, 30 V - Output power at = 80 W - Efficiency = 58% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 70 W CW output power VDD = 30 V, IDQ = 550 mA, POUT = 18 W average = 2135 MHz, = 2145 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF Characteristic Symbol Min Typ Unit Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet DISCONTINUED 1 of 10 Ordering Information Type and Version PTFA210701E V4 PTFA210701F V4 Package Type H-36265-2 H-37265-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA210701E PTFA210701F *See Infineon distributor for future availability. Data Sheet DISCONTINUED 2 of 10 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA210701E PTFA210701F Drain Efficiency % Gain dB , Efficiency % Broadband Performance VDD = 30 V, IDQ = 550 mA, POUT = dBm Two-tone Drive-up at Optimum IDQ VDD = 30 V, IDQ = 550 mA, = 2140 MHz, tone spacing = 1 MHz Input Return Loss dB Intermodulation Distortion dBc 30 Efficiency 25 20 15 Gain 10 5 0 -5 -10 Return Loss -15 -20 -25 -30 -35 -30 -35 -40 -45 -50 -55 -60 -65 Efficiency t IM3 uc IM5 prod IM7 40 35 30 25 20 15 10 5 2070 2090 2110 2130 2150 2170 2190 2210 Frequency MHz 35 37 39 41 43 45 47 49 Output Power, PEP dBm tinued Two-carrier WCDMA at Selected Biases n VDD = 30 V, = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ o -30 isc -35 450 mA d -40 650 mA Power Sweep, CW Conditions VDD = 30 V, IDQ = 550 mA, = 2170 MHz 18 TCASE = 25°C TCASE = 90°C 16 Gain Gain dB 600 mA 550 mA 500 mA 30 32 34 36 38 40 42 44 Efficiency |
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