RFP45N06

RFP45N06 Datasheet

RFG45N06, RFP45N06, RF1S45N06SM

Part	Datasheet
RFP45N06	RFP45N06 (pdf)

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RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49028. Ordering Information PACKAGE BRAND RFG45N06 TO-247 RFG45N06 RFP45N06 TO-220AB RFP45N06 RF1S45N06SM TO-263AB F1S45N06 NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A. Packaging DRAIN BOTTOM SIDE METAL JEDEC STYLE TO-247 SOURCE DRAIN GATE • 45A, 60V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” DRAIN GATE SOURCE DRAIN FLANGE JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN FLANGE 2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise RFG45N06, RFP45N06 RF1S45N06SM UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RG = Note 1 VDGR Continuous Drain Current .ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Pulsed Avalanche Rating EAS Power Dissipation PD Linear Derating Factor Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 .Tpkg 60 45 Refer to Peak Current Curve ±20 Refer to UIS Curve 131 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time BVDSS ID = 250µA, VGS = 0V Figure 11 VGS TH VGS = VDS, ID = 250µA Figure 10 IDSS VDS = Rated BVDSS, VGS = 0V

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RFG45N06, RFP45N06, RF1S45N06SM

Data Sheet

January 2002
45A, 60V, Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA49028.
Ordering Information

PACKAGE

BRAND

RFG45N06

TO-247

RFG45N06

RFP45N06

TO-220AB

RFP45N06

RF1S45N06SM

TO-263AB

F1S45N06
NOTE When ordering, use the entire part number. Add the 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.

Packaging

DRAIN BOTTOM SIDE METAL

JEDEC STYLE TO-247 SOURCE DRAIN GATE
• 45A, 60V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

DRAIN

GATE SOURCE

DRAIN FLANGE

JEDEC TO-220AB

SOURCE DRAIN GATE

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE
2002 Fairchild Semiconductor Corporation

RFG45N06, RFP45N06, RF1S45N06SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

RFG45N06, RFP45N06

RF1S45N06SM

UNITS

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RG = Note 1 VDGR Continuous Drain Current .ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Pulsed Avalanche Rating EAS Power Dissipation PD Linear Derating Factor

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 .Tpkg
60 45 Refer to Peak Current Curve ±20 Refer to UIS Curve 131 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time

BVDSS ID = 250µA, VGS = 0V Figure 11

VGS TH VGS = VDS, ID = 250µA Figure 10

IDSS VDS = Rated BVDSS, VGS = 0V

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Datasheet ID: RFP45N06 634571