PTFA191001F V4

PTFA191001F V4 Datasheet

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available.

Part	Datasheet
PTFA191001F V4	PTFA191001F V4 (pdf)

Related Parts	Information
PTFA191001EV4R250XTMA1	PTFA191001EV4R250XTMA1
PTFA191001EV4XWSA1	PTFA191001EV4XWSA1
PTFA191001F V4 R250	PTFA191001F V4 R250

PDF Datasheet Preview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 1990 MHz The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA191001E Package H-36248-2 PTFA191001F Package H-37248-2 PTFA191001E PTFA191001F IM3 dBc , ACPR dBc Drain Efficiency % Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 mA, = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing Efficiency -53 34 ACPR 36 38 40 42 44 Average Output Power dBm • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion = dBc - Adjacent channel power = dBm • Typical CW performance, 1960 MHz, 30 V - Output power at = 130 W - Efficiency = 56% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 100 W CW output power All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTFA191001E PTFA191001F Confidential, Limited Internal Distribution RF Characteristics WCDMA Measurements tested in Infineon test fixture VDD = 30 V, IDQ = 900 mA, POUT = 44 dBm average = 1955 MHz, = 1965 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Unit dB % dBc DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = 900 mA VGS = 10 V, VDS = 0 V Maximum Ratings Ordering Information Type and Version PTFA191001E V4 PTFA191001F V4 Package Type H-36248-2 H-37248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA191001E PTFA191001F Typical Performance data taken in a production test fixture Gain dB , Efficiency % Input Return Loss dB 3rd Order IMD dBc Broadband Performance VDD = 30 V, IDQ = 900 mA, POUT = dBm Return Loss Efficiency 20 -25 15 Gain 1900 1920 1940 1960 1980 2000 2020 Frequency MHz Two-carrier WCDMA at Selected Biases VDD = 30 V, = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ 900 mA -50 800 mA -55 34 36 38 40 42 44 46 Output Power, PEP dBm Data Sheet 3 of 11 Confidential, Limited Internal Distribution Typical Performance cont. Gain dB Power Sweep, CW Conditions VDD = 30 V, IDQ = 900 mA, = 1960 MHz 50 17 Gain Efficiency TCASE = 25°C TCASE = 90°C 10 20 40 60 80 100 120 Output Power W Drain Efficiency % Adjacent Channel Power Ratio dB PTFA191001E PTFA191001F Drain Efficiency % Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 m A, = 1960 MHz, 3GPP WCDMA s ignal, TM1 w/16 DPCH, 67% clipping, PAR = dB, MHz BW Efficiency -55 33 ACPR ACPR Up ACPR Low Average Output Power dBm

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Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 1990 MHz

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available.

PTFA191001E Package H-36248-2

PTFA191001F Package H-37248-2

PTFA191001E PTFA191001F

IM3 dBc , ACPR dBc Drain Efficiency %

Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 mA, = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing

Efficiency
-53 34

ACPR
36 38 40 42 44 Average Output Power dBm
• Thermally-enhanced packages, Pb-free and RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc
• Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion = dBc - Adjacent channel power = dBm
• Typical CW performance, 1960 MHz, 30 V - Output power at = 130 W - Efficiency = 56%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 30 V, 100 W CW output power

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 11

PTFA191001E PTFA191001F

Confidential, Limited Internal Distribution

RF Characteristics

WCDMA Measurements tested in Infineon test fixture VDD = 30 V, IDQ = 900 mA, POUT = 44 dBm average = 1955 MHz, = 1965 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF

Characteristic

Symbol Min Typ

Gain

Drain Efficiency

Intermodulation Distortion

Unit dB % dBc

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current

On-State Resistance Operating Gate Voltage Gate Leakage Current

Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = 900 mA VGS = 10 V, VDS = 0 V

Maximum Ratings
Ordering Information

Type and Version PTFA191001E V4 PTFA191001F V4

Package Type H-36248-2 H-37248-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTFA191001E PTFA191001F

Typical Performance data taken in a production test fixture

Gain dB , Efficiency % Input Return Loss dB 3rd Order IMD dBc

Broadband Performance VDD = 30 V, IDQ = 900 mA, POUT = dBm

Return Loss

Efficiency
20 -25
15 Gain
1900 1920 1940 1960 1980 2000 2020

Frequency MHz

Two-carrier WCDMA at Selected Biases VDD = 30 V, = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
900 mA -50
800 mA -55
34 36 38 40 42 44 46 Output Power, PEP dBm

Data Sheet
3 of 11

Confidential, Limited Internal Distribution

Typical Performance cont.

Gain dB

Power Sweep, CW Conditions VDD = 30 V, IDQ = 900 mA, = 1960 MHz
50 17

Gain

Efficiency

TCASE = 25°C

TCASE = 90°C
10 20 40 60 80 100 120

Output Power W

Drain Efficiency % Adjacent Channel Power Ratio dB

PTFA191001E PTFA191001F

Drain Efficiency %

Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 m A, = 1960 MHz, 3GPP WCDMA s ignal, TM1 w/16 DPCH, 67% clipping,

PAR = dB, MHz BW

Efficiency
-55 33

ACPR

ACPR Up ACPR Low

Average Output Power dBm

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Datasheet ID: PTFA191001FV4 638506