PTFA190451EV4R250XTMA1
PTFA190451EV4R250XTMA1 Datasheet
PTFA190451E PTFA190451F
| Part | Datasheet |
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PTFA190451EV4R250XTMA1 |
PTFA190451EV4R250XTMA1 (pdf) |
| Related Parts | Information |
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PTFA190451FV4XWSA1 |
PTFA190451FV4XWSA1 |
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PTFA190451EV4XWSA1 |
PTFA190451EV4XWSA1 |
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PTFA190451FV4R250XTMA1 |
PTFA190451FV4R250XTMA1 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 1990 MHz PTFA190451E PTFA190451F The PTFA190451E and PTFA190451F are thermally-enhanced, PTFA190451E 45-watt, internally matched LDMOS FETs designed for WCDMA, Package H-36265-2 TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's s advanced LDMOS process, these devices provide excellent thermal t performance and superior reliability. PTFA190451F Package H-37265-2 IM3 dBc , ACPR dBc Drain Efficiency % duc 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, = 1960 MHz, 3GPP WCDMA o signal, PAR = 8 dB, 10 MHz carrier spacing r -25 p Efficiency d -35 ue -40 in -45 ACPR t -50 n -55 Average Output Power dBm disc RF Characteristics • Broadband internal matching • Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical CW performance, 1960 MHz, 28 V - Output power at = 60 W - Efficiency = 60% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 45 W CW output power • Pb-free and RoHS compliant WCDMA Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 450 mA, POUT = 11 W average = 1955 MHz, = 1965 MHz, 3GPP signal, channel bandwidth = MHz , peak/average = 8 dB CCDF Characteristic Symbol Min Typ Unit Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet Ordering Information Type and Version Package Outline Package Description PTFA190451E V4 H-36265-2 Thermally-enhanced slotted flanges, single-ended PTFA190451F V4 H-37265-2 Thermally-enhanced earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 10 Shipping Tray Tray Marking PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA190451E PTFA190451F Drain Efficiency % Gain dB , Efficiency % Broadband Performance VDD = 28 V, IDQ = 450 mA, POUT = 12 W 2-Tone Drive-up VDD = 28 V, IDQ = 450 mA, = 1960 MHz, tone spacing = 1 MHz Input Return Loss dB Intermodulation Distortion dBc Return Loss ct 25 Efficiency Gain ro 10 p 1900 1920 1940 1960 1980 Frequency MHz 2000 -35 2020 -30 -35 -40 -45 -50 -55 -60 -65 Efficiency IM5 30 20 IM7 15 5 36 38 40 42 44 46 48 Output Power, PEP dBm inued Two-carrier WCDMA at Various Biases VDD = 28 V, = 1960 MHz, 3GPP WCDMA signal, t PAR = 8 dB, 10 MHz carrier spacing, series show IDQ n -32 |
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