BFS 380L6 E6327
BFS 380L6 E6327 Datasheet
BFS380L6
| Part | Datasheet |
|---|---|
BFS 380L6 E6327 |
BFS 380L6 E6327 (pdf) |
| PDF Datasheet Preview |
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| BFS380L6 NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to GHz Low noise figure dB at GHz Built in 2 transistors TR1, TR2 die as BFR380L3 6 TR1 P-TSLP-6-1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS380L6 Marking Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 96°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 2 80 14 150 -65 150 -65 150 Value 140 Unit V mA mW °C Unit K/W Jun-11-2003 BFS380L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V V BR CEO 6 ICES ICBO IEBO 60 130 200 Unit |
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