PTFA181001HL V1 R250
PTFA181001HL V1 R250 Datasheet
Preliminary PTFA181001GL PTFA181001HL
| Part | Datasheet |
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PTFA181001HL V1 R250 |
PTFA181001HL V1 R250 (pdf) |
| Related Parts | Information |
|---|---|
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PTFA181001GL V1 |
PTFA181001GL V1 |
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PTFA181001GL V1 R250 |
PTFA181001GL V1 R250 |
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PTFA181001HL V1 |
PTFA181001HL V1 |
| PDF Datasheet Preview |
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| Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 1880 MHz The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL* Package PG-63248-2 PTFA181001HL* Package PG-64248-2 IM3 dBc , ACPR dBc Drain Efficiency % Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing Efficiency 25 20 ACPR 15 34 36 38 40 42 44 46 Average Output Power dBm • Thermally-enhanced, plastic open-cavity EPOC packages with copper flanges, Pb-free and RoHS compliant • Broadband internal matching • Typical EDGE performance at MHz, 28 V - Average output power = 45 W - Linear Gain = dB - Efficiency = 36% - EVM RMS = • Typical CW performance, 1880 MHz, 28 V - Output power at = 120 W - Gain dB - Efficiency = 52% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability • Capable of handling 10:1 VSWR 28 V, 100 W CW output power RF Characteristics EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 750 mA, POUT = 45 W AVG , = MHz Characteristic Symbol Min Typ Unit Error Vector Magnitude RMS EVM Modulation Spectrum 400 KHz ACPR Modulation Spectrum 600 KHz ACPR Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Preliminary Data Sheet 1 of 11 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution RF Characteristics cont. Ordering Information Type and Version PTFA181001GL* V1 PTFA181001HL* V1 Package Type PG-63248-2 PG-64248-2 Package Description Shipping Thermally-enhanced, plastic Tray open-cavity, slotted flange, single-ended Thermally-enhanced, plastic Tray open-cavity, earless flange, single-ended Marking PTFA181001GL PTFA181001HL *See Infineon distributor for future availability. Preliminary Data Sheet 2 of 11 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture Preliminary PTFA181001GL PTFA181001HL Drain Efficiency % EVM RMS average % Edge EVM and Modulation Spectrum vs. Quiescent Current VDD = 28V, = MHz, POUT = dBm -50 400 KHz 600 KHz -80 -90 Quiescent Current A Modulation Spectrum dBc Modulation Spectrum dB EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, = MHz -20 -30 -40 -50 -60 -70 -80 -90 -100 Efficiency 400 kHz 15 600 kHz 5 39 41 43 45 47 49 Output Power dBm EVM RMS average % EDGE EVM Performance VDD = 28 V, IDQ = 750 mA, = MHz Efficiency 37 39 41 43 45 47 49 Output Power dBm Drain Efficiency % IMD dBc |
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