PTFA092211FLV4XWSA1
PTFA092211FLV4XWSA1 Datasheet
The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
| Part | Datasheet |
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PTFA092211FLV4XWSA1 |
PTFA092211FLV4XWSA1 (pdf) |
| Related Parts | Information |
|---|---|
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PTFA092211FLV4R250XTMA1 |
PTFA092211FLV4R250XTMA1 |
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PTFA092211ELV4XWSA1 |
PTFA092211ELV4XWSA1 |
|
PTFA092211ELV4R250XTMA1 |
PTFA092211ELV4R250XTMA1 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 960 MHz The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 PTFA092211EL PTFA092211FL Drain Efficiency % ACPR dBc Two-carrier WCDMA Performance VDD = 30 V, IDQ = A, = 940 MHz, 3GPP WCDMA signal, PAR = dB, 5 MHz carrier spacing Efficiency 40 41 42 43 44 45 46 47 48 49 Output Power, Avg. dBm RF Characteristics • Broadband internal matching • Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = dB - Efficiency = 30% - Intermodulation distortion = dBc • Typical CW performance, 940 MHz, 30 V - Output power at = 250 W - Gain = dB - Efficiency = 59% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 220 W CW output power • Pb-free, RoHS-compliant and thermally-enhanced packages Two-carrier WCDMA Measurements tested in Infineon test fixture VDD = 30 V, IDQ = 1750 mA, POUT = 50 W AVG , = MHz, = MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc All published data at TCASE = 25 °C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 Confidential, Limited Internal Distribution RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 30 V, IDQ = 1750 mA, POUT = 220 W PEP, = 940 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min PTFA092211EL PTFA092211FL Unit DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 30 V, IDQ = 1750 mA VGS = 10 V, VDS = 0 V Maximum Ratings Ordering Information Symbol V BR DSS IDSS RDS on VGS IGSS Symbol VDSS VGS TJ PD TSTG Min Typ Value 65 to +12 200 700 to +150 Unit V µA µA V µA Unit V °C W W/°C °C °C/W Type and Version PTFA092211EL V4 Package Type H-33288-2 PTFA092211FL V4 H-34288-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tray Marking PTFA092211EL PTFA092211FL Data Sheet 2 of 10 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA092211EL PTFA092211FL Drain Efficiency % Gain dB CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = A, = 940 MHz Gain 14 35 Efficiency Output Power dBm Drain Efficiency % Gain dB CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = A, = 940 MHz 20 TCASE = 25°C 19 TCASE = 90°C |
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