PTFA091201GL V1
PTFA091201GL V1 Datasheet
PTFA091201GL PTFA091201HL
| Part | Datasheet |
|---|---|
PTFA091201GL V1 |
PTFA091201GL V1 (pdf) |
| Related Parts | Information |
|---|---|
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PTFA091201HL V1 R250 |
PTFA091201HL V1 R250 |
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PTFA091201HL V1 |
PTFA091201HL V1 |
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PTFA091201GL V1 R250 |
PTFA091201GL V1 R250 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 960 MHz PTFA091201GL PTFA091201HL The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Modulation Spectrum dB Drain Efficiency % EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, = MHz Efficiency 400 KHz 600 KHz 15 36 38 40 42 44 46 48 50 Output Power, avg. dBm • Thermally-enhanced plastic open-cavity EPOC packages with copper flanges, Pb-free and RoHS compliant • Broadband internal matching • Typical EDGE performance - Average output power = 50 W - Gain = dB - Efficiency = 44% • Typical CW performance - Output power at = 135 W - Gain = 17 dB - Efficiency = 64% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 120 W CW output power RF Characteristics EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 750 mA, POUT = 50 W AVG , = MHz Characteristic Symbol Min Typ Unit Error Vector Magnitude EVM RMS Modulation Spectrum 400 kHz ACPR Modulation Spectrum 600 kHz Gain Drain Efficiency ACPR All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 Confidential, Limited Internal Distribution RF Characteristics cont. Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 750 mA, POUT = 110 W PEP, = 960 MHz, tone spacing = 1 MHz Characteristic Ordering Information Symbol VDSS VGS TJ PD TSTG Value 65 to +12 200 625 to +150 Unit V °C W W/°C °C °C/W Type and Version Package PTFA091201GL V1 PG-63248-2 PTFA091201HL V1 PG-64248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 10 Shipping Tray Tray Marking PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA091201GL PTFA091201HL Gain dB Broadband Performance VDD = 28 V, IDQ = 750 mA, POUT = 120 W 19 Gain 16 900 910 Efficiency 60 55 -10 Return Loss -5105 -20 -25 45 920 930 940 950 960 Frequency MHz Return Loss dB , Efficiency % IMD dBc Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = mA, = 959 MHz, = 960 MHz -30 3rd Order -40 5th -60 7th -70 36 37 38 39 40 41 42 43 44 45 46 47 48 49 Output Power, Avg dBm IMD dBc IM3 vs. Output Power at Selected Biases VDD = 28 V, = 959 MHz, = 960 MHz series show Idq |
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