PTFA082201E V1
PTFA082201E V1 Datasheet
PTFA082201E PTFA082201F
| Part | Datasheet |
|---|---|
PTFA082201E V1 |
PTFA082201E V1 (pdf) |
| Related Parts | Information |
|---|---|
|
PTFA082201FV4R250XTMA1 |
PTFA082201FV4R250XTMA1 |
|
PTFA082201EV4XWSA1 |
PTFA082201EV4XWSA1 |
|
PTFA082201EV4R250XTMA1 |
PTFA082201EV4R250XTMA1 |
|
PTFA082201F V1 |
PTFA082201F V1 |
|
PTFA082201FV4XWSA1 |
PTFA082201FV4XWSA1 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 894 MHz PTFA082201E PTFA082201F The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs PTFA082201E designed for CDMA and WCDMA power amplifier applications in Package H-36260-2 the 869 to 894 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these ts devices provide excellent thermal performance and superior reliability. PTFA082201F Package H-37260-2 Drain Efficiency % IMD dBc , ACPR dBc duc 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1950 mA, = 894 MHz, 3GPP WCDMA o signal, P/A R = dB, 10 MHz carrier spacing, r MHz bandwidth ed 30 ACPR IMD tin 10 n 0 o 30 Gain -50 Efficiency Output Power, Avg. dBm disc RF Characteristics • Thermally-enhanced packages, Pb-free and RoHS compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 894 MHz, 30 V - Average output power = 55 W - Linear Gain = dB - Efficiency = 30% - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical CW performance, 894 MHz, 30 V - Output power at = 250 W - Efficiency = 59% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR at 30 V, 220 W CW output power Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = 1950 mA, POUT = 55 W average = 884 MHz, = 894 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB CCDF Characteristic Symbol Min Typ Unit Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Package Description PTFA082201E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA082201F V4 H-37260-2 Thermally-enhanced earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 10 Shipping Tray Tray Marking PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA082201E PTFA082201F Drain Efficiency % Efficiency % , Gain dB 2-Carrier WCDMA Performance Two-carrier WCDMA Power Sweep VDD = 30 V, IDQ = 1950 mA, = 894 MHz, 3GPP WCDMA signal, P/A R = dB, 10 MHz carrier spacing, VDD = 30 V, IDQ = 1600 mA, = 889 MHz, = 894 MHz bandwidth IMD dBc , ACPR dBc ACPR dBc TCASE = 25°C 40 TCASE = 90°C ts 30 Gain IMD Efficiency du 10 o 0 pr 30 ACPR Output Power dBm -55 50 -10 -20 -30 -40 -50 -60 Efficiency 30 15 ACPR Output Power dBm ued Gain & Efficiency vs. Output Power tin VDD = 30 V, IDQ = 1950 mA, = 894 MHz is 19 Gain 2-Tone Broadband Performance VDD = 30 V, IDQ = 1950 mA, POUT = 110 W |
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