MT18VDDF12872DG-335D3

MT18VDDF12872DG-335D3 Datasheet

MT18VDDF6472D 512MB1 MT18VDDF12872D 1GB

Part	Datasheet
MT18VDDF12872DG-335D3	MT18VDDF12872DG-335D3 (pdf)

Related Parts	Information
MT18VDDF12872DG-335J1	MT18VDDF12872DG-335J1
MT18VDDF12872DG-335F1	MT18VDDF12872DG-335F1

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512MB, 1GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT18VDDF6472D 512MB1 MT18VDDF12872D 1GB For component data sheets, refer to Micron’s Web site: • 184-pin, registered dual in-line memory module RDIMM • Fast data transfer rates PC2100, PC2700, or PC3200 • 512MB 64 Meg x 72 and 1GB 128 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = +2.5V -40B VDD = VDDQ = +2.6V • VDDSPD = +2.3V to +3.6V • 2.5V I/O SSTL_2-compatible • Internal, pipelined double data rate DDR 2n-prefetch architecture • Bidirectional data strobe DQS transmitted/ received with is, source-synchronous data capture • Differential clock inputs CK and CK# • Multiple internal device banks for concurrent operation • Dual rank • Selectable burst lengths BL 2, 4, or 8 • Auto precharge option • Auto refresh and self refresh modes 7.8125µs maximum average periodic refresh interval • Serial presence-detect SPD with EEPROM • Selectable CAS latency CL for maximum compatibility • Gold edge contacts 184-Pin RDIMM MO-206 Figures Figure 1 R/C H -40B PCB height 28.58mm 1.125in Figure 2 R/C B -335, -262, -26A, -265 PCB height 28.58mm 1.125in Options Marking • Operating temperature2 Commercial 0°C TA +70°C Industrial TA +85°C • Package None I 184-pin DIMM standard 184-pin DIMM Pb-free • Memory clock, speed, CAS latency3 5.0ns 200 MHz , 400 MT/s, CL = 3 -40B 6.0ns 167 MHz , 333 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = 21 7.5ns 133 MHz , 266 MT/s, CL = 21 7.5ns 133 MHz , 266 MT/s, CL = -335 -262 -26A -265 Notes Not recommended for new designs. Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features Table 1 Key Timing Parameters Speed Grade -40B -335 -262 -26A -265 Industry Nomenclature Data Rate MT/s tRCD CL = 3 CL = CL = 2

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512MB, 1GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features

DDR SDRAM RDIMM

MT18VDDF6472D 512MB1 MT18VDDF12872D 1GB

For component data sheets, refer to Micron’s Web site:
• 184-pin, registered dual in-line memory module RDIMM
• Fast data transfer rates PC2100, PC2700, or PC3200
• 512MB 64 Meg x 72 and 1GB 128 Meg x 72
• Supports ECC error detection and correction
• VDD = VDDQ = +2.5V
-40B VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O SSTL_2-compatible
• Internal, pipelined double data rate DDR
2n-prefetch architecture
• Bidirectional data strobe DQS transmitted/
received with is, source-synchronous data capture
• Differential clock inputs CK and CK#
• Multiple internal device banks for concurrent operation
• Dual rank
• Selectable burst lengths BL 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes 7.8125µs maximum average periodic refresh interval
• Serial presence-detect SPD with EEPROM
• Selectable CAS latency CL for maximum compatibility
• Gold edge contacts
184-Pin RDIMM MO-206 Figures

Figure 1 R/C H -40B

PCB height 28.58mm 1.125in

Figure 2 R/C B -335, -262, -26A, -265 PCB height 28.58mm 1.125in

Options

Marking
• Operating temperature2

Commercial 0°C TA +70°C Industrial TA +85°C
• Package

None I
184-pin DIMM standard
184-pin DIMM Pb-free
• Memory clock, speed, CAS latency3
5.0ns 200 MHz , 400 MT/s, CL = 3
-40B
6.0ns 167 MHz , 333 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = 21 7.5ns 133 MHz , 266 MT/s, CL = 21 7.5ns 133 MHz , 266 MT/s, CL =
-335 -262 -26A -265

Notes Not recommended for new designs.

Contact Micron for industrial temperature
module offerings.

CL = CAS READ latency registered mode
will add one clock cycle to CL.

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2004 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features

Table 1 Key Timing Parameters

Speed Grade
-40B -335 -262 -26A -265

Industry Nomenclature

Data Rate MT/s
tRCD

CL = 3 CL = CL = 2

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT18VDDF12872DG-335D3 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT18VDDF12872DG-335D3 648350