PTFA072401ELV4XWSA1
PTFA072401ELV4XWSA1 Datasheet
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
| Part | Datasheet |
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PTFA072401ELV4XWSA1 |
PTFA072401ELV4XWSA1 (pdf) |
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PTFA072401ELV4R250XTMA1 |
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| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 770 MHz The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2 PTFA072401EL PTFA072401FL Gain dB Drain Efficiency % Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = A, = 765 MHz Gain 15 30 Efficiency Output Power dBm 65 55 45 35 25 15 5 55 • Broadband internal matching • Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = dBc • Typical CW performance, 770 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 58% • Integrated ESD protection • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 240 W CW output power • Thermally-enhanced packages, Pb-free and RoHS compliant with low gold micron plating RF Characteristics Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average, = 760 MHz, = 770 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 9 Confidential, Limited Internal Distribution RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 30 V, IDQ = 1800 mA, POUT = 220 W PEP, = 765 MHz, tone spacing = 1 MHz Characteristic Symbol Min Gain Drain Efficiency Intermodulation Distortion PTFA072401EL PTFA072401FL Unit DC Characteristics Characteristic Conditions Ordering Information Type and Version PTFA072401EL V4 PTFA072401FL V4 Package Outline H-33288-2 H-34288-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Data Sheet 2 of 9 PTFA072401EL PTFA072401FL Drain Efficiency % Typical Performance data taken in a production test fixture Broadband Performance VDD = 30 V, IDQ = 1800 mA, POUT = 126 W Two-tone Drive-up VDD = 30 V, IDQ = 1800 mA, = 765 MHz, tone spacing = 1 MHz Gain dB , Efficiency % Efficiency Return Loss Gain 15 700 Frequency MHz -35 790 Input Return Loss dB Intermodulation Distortion dBc -25 -30 -35 -40 -45 -50 -55 -60 IM3 Efficiency 35 IM5 20 IM7 15 44 46 48 50 52 54 56 Output Power, PEP dBm ACPR dBc Power Gain dB Power Sweep VDD = 30 V, = 770 MHz 21 IDQ = A IDQ = A IDQ = A IDQ = A IDQ = A Output Power dBm Drain Efficiency % Two-carrier WCDMA Performance VDD = 30 V, IDQ = A, = 765 MHz TCASE = 25° C TCASE = 90° C -45 20 ACPR |
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