PTFA043002E V1

PTFA043002E V1 Datasheet

PTFA043002E

Part	Datasheet
PTFA043002E V1	PTFA043002E V1 (pdf)

PDF Datasheet Preview
PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 860 MHz The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA043002E Package H-30275-4 IM3, 5, 7 dBc Drain Efficiency % 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 Two-tone Drive-up at 800 MHz in broadband circuit VDD = 32 V, IDQ = A, = MHz, = MHz 3rd Order Efficiency 40 35 7th 20 0 50 100 150 200 250 300 350 Output Power W PEP • Thermally-enhanced package • Broadband internal matching • Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent < dBc • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability • Low HCI drift • Pb-free and RoHS compliant • Capable of handling 5:1 VSWR at 32 V, 300 W CW output power RF Characteristics ATSC 8VSB Characteristics broadband fixture, push-pull configuration VDD = 32 V, POUT = 100 WAVG, IDQ = A, = 800 MHz Characteristic Common Source Power Gain Drain Efficiency FIrst Adjacent Symbol Min Typ Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTFA043002E RF Characteristics cont. Two-tone Measurements tested in narrowband test fixture VDD = 32 V, IDQ = A, POUT = 300 WPEP, = 860 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Ordering Information Type PTFA043002E Package Outline H-30275-4 Package Description Thermally-enhanced, flange mount Marking PTFA043002E See Infineon distributor for future availability. Data Sheet 2 of 10 PTFA043002E Drain Efficiency % Typical Performance data taken in a broadband test fixture Output Power, PEP W Drain Efficiency % Adjacent dBc Two-tone IMD Performance VDD = 32 V, IDQ = A, IMD = dBc Output Power PEP Drain Efficiency 30 0 400 Frequency MHz 20 900 8VSB Performance vs. Frequency 100 W Average Power VDD = 32 V, IDQ = A, IMD = dBc Efficiency Adjacent -40 400 Frequency MHz 10 900 Output Power, 25% Sync Compression W, Pk, Sync. Drain Efficiency % Small Signal Gain dB Analog NTSC Performance VDD = 32 V, IDQ = A 350 300 250 200 150 100 50 0 400 Output Power 50 45 Efficiency 40 Frequency MHz Gain vs. Frequency VDD = 32 V, IDQ = A Frequency MHz Data Sheet 3 of 10 Typical Performance cont. ACP MHz dBc DVB Adjacent Channel Power VDD = 32 V, IDQ = A, 63 W DVB s ignal -55 MHz

PDF Datasheet Preview

PTFA043002E

Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 860 MHz

The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

PTFA043002E Package H-30275-4

IM3, 5, 7 dBc Drain Efficiency %
0 -10 -20 -30 -40 -50 -60 -70 -80 -90

Two-tone Drive-up at 800 MHz
in broadband circuit

VDD = 32 V, IDQ = A,
= MHz, = MHz
3rd Order

Efficiency 40 35
7th 20
0 50 100 150 200 250 300 350

Output Power W PEP
• Thermally-enhanced package
• Broadband internal matching
• Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent < dBc
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability
• Low HCI drift
• Pb-free and RoHS compliant
• Capable of handling 5:1 VSWR at 32 V, 300 W CW output power

RF Characteristics

ATSC 8VSB Characteristics broadband fixture, push-pull configuration VDD = 32 V, POUT = 100 WAVG, IDQ = A, = 800 MHz

Characteristic Common Source Power Gain Drain Efficiency FIrst Adjacent

Symbol Min Typ

Unit dB % dBc

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 10

PTFA043002E

RF Characteristics cont.

Two-tone Measurements tested in narrowband test fixture VDD = 32 V, IDQ = A, POUT = 300 WPEP, = 860 MHz, tone spacing = 1 MHz

Characteristic

Symbol Min Typ

Gain

Drain Efficiency

Intermodulation Distortion
Ordering Information

Type PTFA043002E

Package Outline H-30275-4

Package Description Thermally-enhanced, flange mount

Marking PTFA043002E
*See Infineon distributor for future availability. Data Sheet
2 of 10

PTFA043002E

Drain Efficiency %

Typical Performance data taken in a broadband test fixture

Output Power, PEP W Drain Efficiency % Adjacent dBc

Two-tone IMD Performance VDD = 32 V, IDQ = A, IMD = dBc

Output Power PEP

Drain Efficiency 30
0 400

Frequency MHz
20 900
8VSB Performance vs. Frequency 100 W Average Power

VDD = 32 V, IDQ = A, IMD = dBc

Efficiency

Adjacent
-40 400

Frequency MHz
10 900

Output Power, 25% Sync Compression W, Pk, Sync.

Drain Efficiency % Small Signal Gain dB

Analog NTSC Performance VDD = 32 V, IDQ = A
350 300 250 200 150 100
50 0 400

Output Power 50 45

Efficiency 40

Frequency MHz

Gain vs. Frequency VDD = 32 V, IDQ = A

Frequency MHz

Data Sheet
3 of 10

Typical Performance cont.

ACP MHz dBc

DVB Adjacent Channel Power

VDD = 32 V, IDQ = A, 63 W DVB s ignal
-55 MHz

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PTFA043002EV1 Datasheet file may be downloaded here without warranties.

Datasheet ID: PTFA043002EV1 638493