PTAB182002TCV2R250XTMA1
PTAB182002TCV2R250XTMA1 Datasheet
PTAB182002TC
| Part | Datasheet |
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PTAB182002TCV2R250XTMA1 |
PTAB182002TCV2R250XTMA1 (pdf) |
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| PTAB182002TC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 1880 MHz The PTAB182002TC is a 180-watt LDMOS FET intended for use in multi-standard cellular power applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless copper Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAB182002TC Package H-49248H-4 formed leads Gain dB Drain Efficiency % Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = V, = 1805, 1842, 1880 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, MHz bandwidth 1805 MHz 1842 MHz 1880 MHz 50 Efficiency Gain Output Power dBm b182002t c gr6 • Asymmetric Doherty design - Main P1dB = 70 W Typ - Peak P1dB = 120 W Typ • Broadband internal matching • Integrated ESD protection • Capable of handling 3:1 VSWR 30 V, 50 W average output power one-carrier WCDMA signal, 10 dB PAR, Doherty test • Copper for enhanced thermal performance • Pb-free and RoHS-compliant RF Characteristics Two-carrier device with leads tested in an Doherty production test VDD = 28 V, VGSPK = VGS at IDQ = 900 V, IDQ = 520 mA, POUT = 29 W avg., = 1870 MHz, = 1880 MHz. 3GPP WCDMA signal MHz bandwidth, dB PAR CCDF. Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps ηD IMD Unit All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 8 PTAB182002TC DC Characteristics Characteristic each side Drain-source Breakdown Voltage Drain Leakage Current On-state Resistance mpeaaink in Operating Gate Voltage pmeaaink GOapteeraLteinagkaGgaeteCVuorrlteangte peak Conditions VGS = 0 V, IDS = 10 mA V BR DSS VDS = 28 V, VGS = 0 V IDSS VDS = 63 V, VGS = 0 V IDSS VGS = 102 V, VDS = 0.V1 V RIDGSS Son Ordering Information Type and Version Order Code Package and Description PTAB182002TC V2 R250 PTAB182002TCV2R250XTMA1 H-49248H-4, ceramic open-cavity, formed leads, earless Shipping Tape & Reel, 250 pcs Pinout Diagram top view Peak Main h-x x248- hgf- 4_D_pd-a_3- 28-13 S flange Lead connections for PTAB182002TC Pin D1 D2 G1 G2 S Description Peak Device Drain Main Device Drain Peak Device Gate Main Device Gate Source Data Sheet 2 of 8 PTAB182002TC Drain Efficiency % Typical Performance data taken in a production Doherty test fixture IMD dBc , ACPR dBc Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = V, = 1805 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, MHz bandwidth IMD Low IMD Up ACPR Efficiency -65 32 Output Power dBm b182002tc gr7 Drain Efficiency % IMD dBc , ACPR dBc Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 500 mA, VGS = V, = 1842 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, MHz bandwidth IMD Low IMD Up ACPR Efficiency -65 32 |
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