SPI08N80C3
SPI08N80C3 Datasheet
SPI08N80C3
| Part | Datasheet |
|---|---|
SPI08N80C3 |
SPI08N80C3 (pdf) |
| PDF Datasheet Preview |
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| CoolMOSTM Power Transistor Product Summary V DS R DS on max Tj = 25°C Q g,typ SPI08N80C3 800 V 45 nC PG-TO262-3 CoolMOSTM 800V designed for • Industrial application with high DC bulk voltage • Switching Application i.e. active clamp forward Type SPI08N80C3 Package PG-TO262-3 Marking 08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive 2 ,3 AR Avalanche current, repetitive 2 ,3 AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage T C=25 °C T C=100 °C T C=25 °C I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V V static AC f >1 Hz Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Value Unit V/ns ±20 ±30 -55 150 2011-09-27 |
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