SPD50N03S2L06GBTMA1

SPD50N03S2L06GBTMA1 Datasheet


SPD50N03S2L-06 L Ph- TO252 -3 PN03L06

Part Datasheet
SPD50N03S2L06GBTMA1 SPD50N03S2L06GBTMA1 SPD50N03S2L06GBTMA1 (pdf)
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OptiMOS&!Power-Transistor

Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x RDS on product FOM %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated

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Type

Package

Marking

SPD50N03S2L-06 L Ph- TO252 -3 PN03L06

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=50 A , VDD=25V, RGS=25"

IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAS EAR dv/dt

VGS Ptot

Tj , Tstg

SPD50N03S2L-06 h

Product Summary

RDS on m"

Ph- TO252 -3

Value
50 200
±20 136
+175 55/175/56

Unit A
kV/µs V W °C

QS-0Z-2008

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPD50N03S2L-06 h

Values

Unit
min. typ. max.
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Datasheet ID: SPD50N03S2L06GBTMA1 638446