SPD30N03S2L07T

SPD30N03S2L07T Datasheet

SPD30N03S2L-07

Part	Datasheet
SPD30N03S2L07T	SPD30N03S2L07T (pdf)

Related Parts	Information
SPD30N03S2L-07	SPD30N03S2L-07

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Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated SPD30N03S2L-07 Product Summary RDS on P- TO252 -3-11 Type Package Ordering Code Marking SPD30N03S2L-07 P- TO252 -3-11 Q67042-S4091 2N03L07 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 30 120 ±20 136 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPD30N03S2L-07 Values Unit min. typ. max. RthJC RthJA - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage

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Power-Transistor

Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS on product FOM
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPD30N03S2L-07

Product Summary

RDS on

P- TO252 -3-11

Type

Package
Ordering Code Marking

SPD30N03S2L-07 P- TO252 -3-11 Q67042-S4091 2N03L07

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=30 A , VDD=25V,

IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAR dv/dt

VGS Ptot

Tj , Tstg

Value
30 120
±20 136
+175 55/175/56

Unit A
kV/µs V W °C
2003-05-09

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPD30N03S2L-07

Values

Unit
min. typ. max.

RthJC RthJA
- 100

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics

Drain-source breakdown voltage

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Datasheet ID: SPD30N03S2L07T 638431