SPD26N06S2L-35
SPD26N06S2L-35 Datasheet
SPD26N06S2L-35
| Part | Datasheet |
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SPD26N06S2L-35 |
SPD26N06S2L-35 (pdf) |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated SPD26N06S2L-35 Product Summary RDS on P- TO252 -3-11 Type Package Ordering Code Marking SPD26N06S2L-35 P- TO252 -3-11 Q67060-S7426 2N06L35 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=26A, VDD=25V, IS=26A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 30 22 120 ±20 68 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 2 SPD26N06S2L-35 Values Unit min. typ. max. RthJC RthJA - K/W - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics |
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