SPD100N03S2L-04
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SPD100N03S2L04T (pdf) |
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SPD100N03S2L-04 |
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SPD100N03S2L-04 Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Product Summary RDS on 100 A P-TO252-5-1 Titel Erstellt von: Type Package Ordering Code Marking SPD100N03S2L-04 P-TO252-5-1 Q67042-S4128 PN03L04 Gate pin 1 n.c. pin 2 Drain pin 3,6 Source pin 4,5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Value Unit Continuous drain current2 TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80A, VDD=25V, ID puls EAR dv/dt kV/µs IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg ±20 +175 55/175/56 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: min. footprint 6 cm2 cooling area 4 SPD100N03S2L-04 Values Unit min. typ. max. RthJC RthJA 1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values |
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