SPD07N20GBTMA1
SPD07N20GBTMA1 Datasheet
SPD 07N20 G
| Part | Datasheet |
|---|---|
SPD07N20GBTMA1 |
SPD07N20GBTMA1 (pdf) |
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| Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated SPD 07N20 G 200 V RDS on Type SPD07N20 G SPU07N20 G Package PG-TO252 PG-TO251 Pb-free Yes Packaging Tape and Reel Tube Pin 1 Pin 2 Pin 3 Maximum Ratings, at Tj = 25 unless otherwise specified Parameter Continuous drain current TC = 25 TC = 100 Pulsed drain current TC = 25 Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 IDpulse EAS EAR dv/dt IS = 7 A, VDS = 160 V, di/dt = 200 A/µs, Tjmax = 175 Gate source voltage Power dissipation TC = 25 Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Value ±20 40 +175 55/150/56 Unit A kV/µs V W 2013-06-27 SPD 07N20 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB min. footprint 6 cm2 cooling area1 Values Unit min. typ. max. RthJC RthJA - 100 Electrical Characteristics, at Tj = 25 unless otherwise specified Parameter Values Unit |
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