MT18HTS25672RHZ-667H1

MT18HTS25672RHZ-667H1 Datasheet

MT18HTS25672RHZ 2GB

Part	Datasheet
MT18HTS25672RHZ-667H1	MT18HTS25672RHZ-667H1 (pdf)

Related Parts	Information
MT18HTS25672RHZ-80EH1	MT18HTS25672RHZ-80EH1

PDF Datasheet Preview
2GB x72, ECC, DR 200-Pin DDR2 SDRAM SORDIMM Features DDR2 SDRAM SORDIMM MT18HTS25672RHZ 2GB • 200-pin, small-outline registered dual in-line memory module SORDIMM • Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400 • 2GB 256 Meg x 72 • Supports ECC error detection and correction • VDD = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent opera- tion • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Phase-lock loop PLL to reduce system clock line loading • Gold edge contacts • Dual rank, using 2Gb TwinDie devices • Halogen-free • Combination Temp Sensor/EEPROM Figure 1 200-Pin SORDIMM R/C B Module height 30mm in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 200-pin DIMM Halogen-free • Frequency/CL2 CL = 5 DDR2-800 CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 Marking None I -80E -800 -667 Contact Micron for industrial temperature module offerings CL = CAS READ latency registered mode will add one clock cycle to CL. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200

PDF Datasheet Preview

2GB x72, ECC, DR 200-Pin DDR2 SDRAM SORDIMM Features

DDR2 SDRAM SORDIMM

MT18HTS25672RHZ 2GB
• 200-pin, small-outline registered dual in-line memory module SORDIMM
• Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400
• 2GB 256 Meg x 72
• Supports ECC error detection and correction
• VDD = 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Phase-lock loop PLL to reduce system clock line
loading
• Gold edge contacts
• Dual rank, using 2Gb TwinDie devices
• Halogen-free
• Combination Temp Sensor/EEPROM

Figure 1 200-Pin SORDIMM R/C B Module height 30mm in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 200-pin DIMM Halogen-free
• Frequency/CL2 CL = 5 DDR2-800 CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667

Marking

None I
-80E -800 -667

Contact Micron for industrial temperature module offerings

CL = CAS READ latency registered mode will add one clock cycle to CL.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

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Datasheet ID: MT18HTS25672RHZ-667H1 648330