ISP75N

ISP75N Datasheet


ISP 75N

Part Datasheet
ISP75N ISP75N ISP75N (pdf)
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Smart Lowside Power Switch For Industrial Applications

ISP 75N

Data Sheet V
• Lead free
• Logic Level Input
• Input protection ESD
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation

Application
• All kinds of resistive, inductive and capacitive loads in industrial applications
• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt

Powernet
• Replaces electromechanical relays and discrete circuits

N channel vertical power FET in Smart Power Technology, protected by embedded protection functions.

Type ISP 75N
Ordering Code on request

Package PG-SOT223-4

Product Summary Parameter Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy

VDS RDS ON ID lim ID Nom EAS

Value 60 550 1 550

Unit V A mJ

Data Sheet V
2008-04-14

ISP 75N

ISP75N Logic

Over voltage Protection

OUTPUT Stage

DRAIN
dV/dt
limitation

Over temperature Protection

Short circuit Protection

Current Limitation

SOURCE

Figure 1 Block Diagram

SOURCE TAB
1 IN 2 DRAIN 3 SOURCE

Figure 2 Pin Configuration

Pin Definitions and Functions

Pin No. Symbol Function

Input activates output and supplies internal logic

DRAIN Output to the load
3 + TAB SOURCE Ground pin3 and TAB are internally connected

Data Sheet V
2008-04-14

ISP 75N

Circuit Description The ISP 75N is a monolithic power switch in Smart Power Technology SPT with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads relays, solenoid in industrial applications.

Protection Functions Note The device provides embedded protection functions. Integrated protection
functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation.
• Over voltage protection An internal clamp limits the output voltage at VDS AZ min. 60V when inductive loads are switched off.
• Current limitation By means of an internal current measurement the drain current is limited at ID lim - A typ. . If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the over temperature threshold is reached.
• Over temperature and short circuit protection This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Over temperature shutdown occurs at minimum 150 °C. A hysteresis of typ. 10 K enables an automatic restart by cooling.

The device is ESD protected according Human Body Model 4 kV and load dump protected see Maximum Ratings .

Data Sheet V
2008-04-14

ISP 75N
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Datasheet ID: ISP75N 638375