IRGP4740DPBF

IRGP4740DPBF Datasheet

IRGP4740DPbF IRGP4740D-EPbF

Part	Datasheet
IRGP4740DPBF	IRGP4740DPBF (pdf)

Related Parts	Information
IRGP4740D-EPBF	IRGP4740D-EPBF

PDF Datasheet Preview
VCES = 650V IC = 40A, TC =100°C IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode tSC 5.5µs, TJ max = 175°C VCE ON typ. = 1.7V IC = 24A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient Lead-Free, RoHs compliant n-channel G Gate IRGP4740DPbF TO-247AC C Collector IRGP4740D-EPbF TO-247AD E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4740DPbF IRGP4740D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C IFM VGE PD TC = 25°C PD TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 60 40 72 96 45 27 96 ±20 250 125 -40 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V Thermal Resistance Parameter IGBT Diode Thermal Resistance Junction-to-Case- each IGBT  Thermal Resistance Junction-to-Case- each Diode  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount Min.

PDF Datasheet Preview

VCES = 650V IC = 40A, TC =100°C

IRGP4740DPbF IRGP4740D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
tSC 5.5µs, TJ max = 175°C

VCE ON typ. = 1.7V IC = 24A

Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding

Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient Lead-Free, RoHs compliant
n-channel

G Gate

IRGP4740DPbF TO-247AC

C Collector

IRGP4740D-EPbF TO-247AD E Emitter

Benefits High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly

Base part number

IRGP4740DPbF IRGP4740D-EPbF

Package Type

TO-247AC TO-247AD

Standard Pack

Form

Quantity

Tube

Tube

Orderable Part Number

IRGP4740DPbF IRGP4740D-EPbF

Absolute Maximum Ratings

Parameter

VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C

IFM VGE PD TC = 25°C PD TC = 100°C TJ TSTG

Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current

Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Max.
650 60 40 72 96 45 27 96 ±20 250 125 -40 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Units V

Thermal Resistance

Parameter

IGBT Diode

Thermal Resistance Junction-to-Case- each IGBT  Thermal Resistance Junction-to-Case- each Diode  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount

Min.

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Datasheet ID: IRGP4740DPBF 638353