IRGS14C40LPBF

IRGS14C40LPBF Datasheet

IRGS14C40LPbF

Part	Datasheet
IRGS14C40LPBF	IRGS14C40LPBF (pdf)

Related Parts	Information
IRGSL14C40LPBF	IRGSL14C40LPBF

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PD - 95193A IRGS14C40LPbF Ignition IGBT IRGSL14C40LPbF IRGB14C40LPbF IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy TERMINAL DIAGRAM Collector Gate R1 R2 = 370V min, 430V max TC = 110°C = 14A typ= 1.2V IL min =11.5A Lead-Free The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 110°C Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage PD TC = 25°C Maximum Power Dissipation PD T = 110°C Maximum Power Dissipation Operating Junction and TSTG Storage Temperature Range VESD Electrostatic Voltage Self-clamped Inductive Switching Current Max Unit Condition Clamped V RG = 1K ohm A VGE = 5V A VGE = 5V mA tPK = 1ms, f = 100Hz Clamped V

PDF Datasheet Preview

PD - 95193A

IRGS14C40LPbF

Ignition IGBT IRGSL14C40LPbF IRGB14C40LPbF

IGBT with on-chip Gate-Emitter and Gate-Collector clamps

Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy

TERMINAL DIAGRAM

Collector

Gate

R1 R2
= 370V min, 430V max TC = 110°C = 14A typ= 1.2V IL min =11.5A

Lead-Free

The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits.

Emitter

JEDEC TO-263AB JEDEC TO-262AA

JEDEC TO-220AB

IRGS14C40L IRGSL14C40L IRGB14C40L

NOTE IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.

Absolute Maximum Ratings

Parameter

VCES

Collector-to-Emitter Voltage

IC TC = 25°C Continuous Collector Current

IC TC = 110°C Continuous Collector Current

Continuous Gate Current

Peak Gate Current

Gate-to-Emitter Voltage

PD TC = 25°C Maximum Power Dissipation

PD T = 110°C Maximum Power Dissipation

Operating Junction and

TSTG

Storage Temperature Range

VESD

Electrostatic Voltage

Self-clamped Inductive Switching Current

Max Unit

Condition

Clamped V RG = 1K ohm

A VGE = 5V

A VGE = 5V
mA tPK = 1ms, f = 100Hz

Clamped V

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Datasheet ID: IRGS14C40LPBF 638341