IRFZ48VS

IRFZ48VS Datasheet

IRFZ48VS

Part	Datasheet
IRFZ48VS	IRFZ48VS (pdf)

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PD - 94051A IRFZ48VS Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Advanced Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. VDSS = 60V RDS on = ID = 72A The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max. 72 51 290 150 ± 20 166 72 15 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Typ. Max. 62 Units W/°C V mJ A mJ V/ns Units °C/W 1 5/18/01 IRFZ48VS Electrical Characteristics TJ = 25°C unless otherwise specified V BR DSS RDS on VGS th gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td on tr td off tf Internal Drain Inductance

PDF Datasheet Preview

PD - 94051A

IRFZ48VS

Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications

Advanced Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

VDSS = 60V RDS on =

ID = 72A

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

D2Pak

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ TSTG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Max. 72 51 290 150 ± 20 166 72 15
-55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Typ.

Max. 62

Units

W/°C

V mJ A mJ V/ns

Units
°C/W
1 5/18/01

IRFZ48VS

Electrical Characteristics TJ = 25°C unless otherwise specified

V BR DSS RDS on VGS th gfs

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg Qgs Qgd td on tr td off tf

Internal Drain Inductance

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Datasheet ID: IRFZ48VS 638340