IPI12CNE8N G
IPI12CNE8N G Datasheet
IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G
| Part | Datasheet |
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IPI12CNE8N G |
IPI12CNE8N G (pdf) |
| Related Parts | Information |
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IPP12CNE8N G |
IPP12CNE8N G |
IPD12CNE8N G |
IPD12CNE8N G |
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IPB12CNE8N G |
IPB12CNE8N G |
| PDF Datasheet Preview |
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| IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO252 ID 85 V 67 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification Type IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Package Marking PG-TO263-3 12CNE8N PG-TO252-3 12CNE8N PG-TO262-3 12CNE8N PG-TO220-3 12CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 Avalanche energy, single pulse Operating and storage temperature T C=25 °C T C=100 °C I D,pulse T C=25 °C I D=67 A, R GS=25 dv /dt I D=67 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C P tot T C=25 °C T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Value 67 48 268 154 ±20 125 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-06-23 IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G |
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