SFP9540
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SFP9540 (pdf) |
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Advanced Power MOSFET SFP9540 n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n 175oC Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current -10 µA Max. VDS = -100V n Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = -100 V RDS on = ID = -17 A TO-220 1.Gate Drain Source Value -100 -17 -12 -68 ±30 578 -17 132 - 55 to +175 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. Units oC/W SFP9540 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS |
More datasheets: ATH016A0X43-SR | ATH016A0X3-SR | 98432-512 | 98432-312 | 98432-311 | 98432-111 | 98432-112 | MIKROE-2864 | R220-160-000 | R220-120-000 |
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