SFP9540

SFP9540 Datasheet


SFP9540

Part Datasheet
SFP9540 SFP9540 SFP9540 (pdf)
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Advanced Power MOSFET

SFP9540
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n 175oC Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current -10 µA Max. VDS = -100V n Low RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25oC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

BVDSS = -100 V RDS on = ID = -17 A

TO-220
1.Gate Drain Source

Value -100 -17 -12 -68 ±30 578 -17 132
- 55 to +175

Units V

A V mJ A mJ V/ns W/oC

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

Typ. --

Max.

Units oC/W

SFP9540

P-CHANNEL POWER MOSFET

Electrical Characteristics TC=25oC unless otherwise specified

Symbol BVDSS

VGS th

IGSS
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Datasheet ID: SFP9540 634717