SPB160N04S203CTMA1
SPB160N04S203CTMA1 Datasheet
SPB160N04S2-03
| Part | Datasheet |
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SPB160N04S203CTMA1 |
SPB160N04S203CTMA1 (pdf) |
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| Power-Transistor • N-Channel • Enhancement mode • High Current Rating • Low On-Resistance RDS on • 175°C operating temperature • Avalanche rated • dv/dt rated SPB160N04S2-03 Product Summary RDS on 160 A P- TO263 -7-3 Type Package Ordering Code Marking SPB160N04S2-03 P- TO263 -7-3 Q67060-S6123 P2N0403 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80A, VDD=25V, IS=160A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 160 640 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-22 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPB160N04S2-03 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA |
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