SPB08P06P
SPB08P06P Datasheet
SPB08P06P
| Part | Datasheet |
|---|---|
SPB08P06P |
SPB08P06P (pdf) |
| PDF Datasheet Preview |
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| Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing RoHS compliant Product Summary V DS R DS on ,max ID SPB08P06P -60 V A P-TO263-3-2 Type Package SPB08P06P P-TO263-3-2 Tape and reel information Marking Lead free Yes Packing Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Value Unit steady state Avalanche energy, single pulse I D=8.83 A, R GS=25 Gate source voltage Power dissipation Operating and storage temperature dv /dt I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C P tot T A=25 °C T j, T stg ESD class Soldering temperature IEC climatic category DIN IEC 68-1 ±20 42 "-55 +175" kV/µs V W °C 260 °C 55/150/56 2006-10-12 Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: Symbol Conditions |
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