SPI08N50C3HKSA1

SPI08N50C3HKSA1 Datasheet

SPP08N50C3, SPI08N50C3 SPA08N50C3

Part	Datasheet
SPI08N50C3HKSA1	SPI08N50C3HKSA1 (pdf)

Related Parts	Information
SPA08N50C3XKSA1	SPA08N50C3XKSA1
SPP08N50C3XKSA1	SPP08N50C3XKSA1
SPI08N50C3XKSA1	SPI08N50C3XKSA1

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SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS Tjmax 560 V RDS on • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 23 1 P-TO220-3-31 • PG-TO-220-3-31;-3-111 Fully isolated package 2500 VAC 1 minute Type SPP08N50C3 SPI08N50C3 SPA08N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4567 Q67040-S4568 SP000216306 Marking 08N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2 ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage ID puls EAS IAR VGS Ptot Tj , Tstg dv/dt Value Unit SPP_I 230 mJ ±20 ±20 ±30 ±30 W °C V/ns 2009-11-27 SPP08N50C3, SPI08N50C3 SPA08N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering mm in. from case for 10s 3 Symbol dv/dt Value 50 Unit V/ns RthJC RthJC_FP RthJA FP Tsold Values min. typ. max. - 260 Unit K/W Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max.

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SPP08N50C3, SPI08N50C3 SPA08N50C3

Cool MOS Power Transistor

VDS Tjmax 560 V

RDS on
• Periodic avalanche rated

PG-TO220FP PG-TO262

PG-TO220
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
23 1 P-TO220-3-31
• PG-TO-220-3-31;-3-111 Fully isolated package 2500 VAC 1 minute

Type SPP08N50C3 SPI08N50C3 SPA08N50C3

Package PG-TO220 PG-TO262 PG-TO220FP
Ordering Code Q67040-S4567 Q67040-S4568 SP000216306

Marking 08N50C3

Maximum Ratings Parameter

Continuous drain current

TC = 25 °C TC = 100 °C

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2

ID=7.6A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax Gate source voltage

ID puls EAS

IAR VGS Ptot Tj , Tstg dv/dt

Value

Unit

SPP_I
230 mJ
±20
±20
±30
±30

W °C V/ns
2009-11-27

SPP08N50C3, SPI08N50C3 SPA08N50C3

Maximum Ratings Parameter Drain Source voltage slope

VDS = 400 V, ID = A, Tj = 125 °C

Thermal Characteristics Parameter

Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, wavesoldering mm in. from case for 10s 3

Symbol dv/dt

Value 50

Unit V/ns

RthJC RthJC_FP RthJA FP Tsold

Values
min. typ. max.
- 260

Unit K/W

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit
min. typ. max.

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Datasheet ID: SPI08N50C3HKSA1 638283