SPP80N10L
SPP80N10L Datasheet
SPI80N10L SPP80N10L
| Part | Datasheet |
|---|---|
SPP80N10L |
SPP80N10L (pdf) |
| Related Parts | Information |
|---|---|
SPI80N10L |
SPI80N10L |
| PDF Datasheet Preview |
|---|
| Power-Transistor N-Channel Enhancement mode Logic Level operating temperature Avalanche rated dv/dt rated SPI80N10L SPP80N10L Product Summary 100 V RDS on 14 m PG-TO262-3-1 PG-TO220-3-1 Type SPP80N10L SPI80N10L Package PG-TO220-3-1 PG-TO262-3-1 Ordering Code Q67042-S4173 Q67042-S4172 Marking 80N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25 ID puls EAS EAR dv/dt IS=80A, VDS=0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C VGS Ptot Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value Unit kV/µs ±20 +175 55/175/56 2005-02-15 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 SPI80N10L SPP80N10L Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V BR DSS 100 VGS=0V, ID=2mA |
| More datasheets: DCMP8W8PJK87 | IDTVPP1500BFG8 | DDMV-24H7S-N-K126 | DEMZ-5H1S-N-A197 | TLE7809G | MDM-15PH005P | DBM21W1S | IDT79RC32V134-DS | CA06EW24-5SB03 | SPI80N10L |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPP80N10L Datasheet file may be downloaded here without warranties.