SPB80N03S2L-04 G
SPB80N03S2L-04 G Datasheet
SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04
| Part | Datasheet |
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SPB80N03S2L-04 G |
SPB80N03S2L-04 G (pdf) |
| Related Parts | Information |
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SPB80N03S2L-04 |
SPB80N03S2L-04 |
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SPP80N03S2L04AKSA1 |
SPP80N03S2L04AKSA1 |
SPI80N03S2L-04 |
SPI80N03S2L-04 |
| PDF Datasheet Preview |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 Product Summary RDS on max. SMD version P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4113 Q67042-S4112 Q67042-S4114 Marking 2N03L04 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 80 320 ±20 188 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
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