SPB80N03S203GATMA1

SPB80N03S203GATMA1 Datasheet

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03

Part	Datasheet
SPB80N03S203GATMA1	SPB80N03S203GATMA1 (pdf)

Related Parts	Information
SPB80N03S2-03	SPB80N03S2-03
SPP80N03S2-03	SPP80N03S2-03
SPI80N03S2-03	SPI80N03S2-03

PDF Datasheet Preview
Power-Transistor • N-Channel • Enhancement mode • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance P- TO262 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Product Summary RDS on max. SMD version P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 Package Ordering Code P- TO220 -3-1 Q67040-S4247 P- TO263 -3-2 Q67040-S4258 P- TO262 -3-1 Q67042-S4079 Marking 2N0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 320 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max.

PDF Datasheet Preview

Power-Transistor
• N-Channel
• Enhancement mode
• Excellent Gate Charge x RDS on product FOM
• Superior thermal resistance

P- TO262 -3-1
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03

Product Summary

RDS on max. SMD version

P- TO263 -3-2

P- TO220 -3-1

Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03

Package
Ordering Code

P- TO220 -3-1 Q67040-S4247

P- TO263 -3-2 Q67040-S4258

P- TO262 -3-1 Q67042-S4079

Marking 2N0303

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V,

IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAS EAR dv/dt

VGS Ptot

Tj , Tstg

Value
80 320
±20 300
+175 55/175/56

Unit A
kV/µs V W °C
2003-05-09

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPB80N03S203GATMA1 Datasheet file may be downloaded here without warranties.

Datasheet ID: SPB80N03S203GATMA1 638268