SPB80N03S2-03

SPB80N03S2-03 Datasheet


SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03

Part Datasheet
SPB80N03S2-03 SPB80N03S2-03 SPB80N03S2-03 (pdf)
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PDF Datasheet Preview
Power-Transistor
• N-Channel
• Enhancement mode
• Excellent Gate Charge x RDS on product FOM
• Superior thermal resistance

P- TO262 -3-1
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03

Product Summary

RDS on max. SMD version

P- TO263 -3-2

P- TO220 -3-1

Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03

Package
Ordering Code

P- TO220 -3-1 Q67040-S4247

P- TO263 -3-2 Q67040-S4258

P- TO262 -3-1 Q67042-S4079

Marking 2N0303

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V,

IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAS EAR dv/dt

VGS Ptot

Tj , Tstg

Value
80 320
±20 300
+175 55/175/56

Unit A
kV/µs V W °C
2003-05-09

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.
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Datasheet ID: SPB80N03S2-03 638268