SPB35N10 G
SPB35N10 G Datasheet
SPI35N10 SPP35N10,SPB35N10
| Part | Datasheet |
|---|---|
SPB35N10 G |
SPB35N10 G (pdf) |
| Related Parts | Information |
|---|---|
|
SPB35N10 |
SPB35N10 |
|
SPB35N10T |
SPB35N10T |
| PDF Datasheet Preview |
|---|
| Power-Transistor N-Channel Enhancement mode operating temperature Avalanche rated P-TO262-3-1 dv/dt rated SPI35N10 SPP35N10,SPB35N10 Product Summary 100 V RDS on 44 m P-TO263-3-2 P-TO220-3-1 Type SPP35N10 SPB35N10 SPI35N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4123 Q67042-S4103 Q67042-S4124 Marking 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current ID puls TC=25°C Avalanche energy, single pulse ID=35 A , VDD=25V, RGS=25 dv/dt IS=35A, VDS=80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Ptot Tj , Tstg Value 35 140 ±20 150 +175 55/175/56 Unit A mJ kV/µs V W °C 2004-08-06 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area F SPI35N10 SPP35N10,SPB35N10 Values Unit min. typ. max. RthJC RthJA 1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics |
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