IPB041N04NGATMA1
IPB041N04NGATMA1 Datasheet
IPB041N04N G
| Part | Datasheet |
|---|---|
IPB041N04NGATMA1 |
IPB041N04NGATMA1 (pdf) |
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| Type Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • 100% Avalanche tested • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS on ,max ID Type IPB041N04N G IPP041N04N G IPP041N04N G IPB041N04N G 40 V mW 80 A Package Marking PG-TO263-3 041N04N PG-TO220-3 041N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 Avalanche current, single pulse3 Avalanche energy, single pulse Gate source voltage 1 J-STD20 and JESD22 V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=80 A, R GS=25 W Value Unit ±20 2009-12-17 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 IPP041N04N G IPB041N04N G Value Unit -55 175 55/175/56 Parameter Symbol Conditions Values |
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