SPP10N10L
SPP10N10L Datasheet
SPI10N10L SPP10N10L,SPB10N10L
| Part | Datasheet |
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SPP10N10L |
SPP10N10L (pdf) |
| Related Parts | Information |
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SPI10N10L |
SPI10N10L |
| PDF Datasheet Preview |
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| Preliminary data SPI10N10L SPP10N10L,SPB10N10L Power-Transistor N-Channel Enhancement mode Logic Level operating temperature P-TO262-3-1 Avalanche rated dv/dt rated Product Summary 100 V RDS on 154 m P-TO263-3-2 P-TO220-3-1 Type SPP10N10L SPB10N10L SPI10N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4163 Q67042-S4164 Q67042-S4162 Marking 10N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=10.3 A , VDD=25V, RGS=25 ID puls EAS dv/dt IS=10.3A, VDS=80V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation Ptot TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value ±20 50 +175 55/175/56 Unit A mJ kV/µs V W °C 2002-04-30 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 RthJC RthJA SPI10N10L SPP10N10L,SPB10N10L Values Unit min. typ. max. 3 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values min. typ. max. Static Characteristics Drain-source breakdown voltage |
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